Perspectives of enhancement of p-type conductivity in ZnO nanowires

Author: tamar tchelidze
Co-authors: Tamaz Kereselidze, Teimuraz Nadareishvili
Keywords: ZnO, Nanowire, Doping
Annotation:

Semiconductor nanowires, are believed to act as key elements in future nanoscaled optoelectronic devices, as they offer intriguing electrical and optoelectronic properties. However, the future of any semiconductor nanowire technology will essentially rely on their doping capability. The availability of both n- and p-type semiconductors is important for the realization of nanowire-based electronics. Wide band gap semiconductors, such as ZnO, suffer from doping polarity. They can be easily by doped n- (or p-type) to the expense of difficulties for doping of opposite type. Space confinement changes donor and acceptor ionization energies; The main factor that makes difficult to obtain n- or p-conductivity is formation of compensating defects. Compensating processes is strongly affected by electronic structure of system: band gap, ionization energies of donors, acceptors and their compensation centers. In the presented work we calculated energy levels of electron bound to Coulomb impurity that is incorporated in semiconductor nanowire.

Lecture files:

Perspective of p-conductivity Enhancement in ZnO Nanowires [en]
ხვრელური გამტარობის გაუმჯობესების პერსპექტივები ZnO-ს ნანოსადენებში [ka]